Location: Home > Terminology Library  

IGBT banner


IGBT (Insulated Gate Bipolar Transistor) is a composite fully-controlled voltage-driven power semiconductor device. IGBT is composed of BJT and MOSFET, with the advantages of high input impedance of MOSFET and low on-state voltage drop of GTR (Giant Transistor, or Power BJT). Suitable for converter systems with DC voltages above 600V, such as AC motors, inverters, switching power supplies, lighting circuits, traction drives, etc.

  Get in touch with us now!

Please take a minute or two to complete this simple form to get reply in 24 hours, thank you!

*Please check the trash box of your mailbox, if you do not receive our email.