Location: Home > Product  

E3S-GS Series Amplifier Built-in Type Photoelectric Sensor

E3S-GS Series
Amplifier Built-in Type Photoelectric Sensor

E3S-GS series amplifier built-in type photoelectric sensor is a slot shape photoelectric sensor with 1ms turn-on delay. The detection method of the E3S-GS series is slot type. E3S-GS series photoelectric sensors use high-quality chips, which have the advantages of long life and high reliability, and can adapt to complex working environments. E3S-GS series photoelectric sensors are equipped with power reverse protection, short-circuit protection, current overload protection, etc., and can be directly connected with PLC device. The operating status of the sensor can be directly observed through the red LED, E3S-GS series photoelectric sensors are IP65 protected (IEC standard). E3S-GS series photoelectric sensors also have a enhanced shell strength and improved wire breakage countermeasures. Depending on the control output, photoelectric sensors can be divided into NPN type (Type N), PNP type (Type P), AC type (Type A), and Relay type (Type J). For more information about the proximity sensors, please visit "What is Photoelectric Sensors".

  • E3S-GS_1
  • E3S-GS_2



How to order


● Components using high-quality chips

● Reverse power supply protection, short circuit protection, and current overload protection

● Long life and high reliability, high environmental adaptability

● Directly connect to PLC

● The red LED shows the operating status of the sensor

● Enhanced shell strength, and improved wire breakage countermeasures

● IP65 protection structure (IEC specification)

● Please read "Precautions for Photoelectric Sensors" before use


● Turn-on Delay: 1.5ms

● Light Source: Infrared light 660nm

● Detection Method: Slot type

● Supply Voltage: DC type — 12-24VDC (6-36VDC) with voltage pulsation (p-p) below 10%; AC type — 110-220VAC (90-250VAC), 50/60Hz

● Current Consumption Type N.P — under 20mA; Type A — under 1.7mA

● Control Output: Type N.P – below 300mA; Type A – below 400mA; Type J – below 2A (contact life above 100,000 cycles)

● Circuit Protection: N.P.D type — Reverse power supply protection, surge absorption, short-circuit protection; A Type — Surge absorption

● Ambient Temperature (operating, storage): -30-+65°C (non-freezing, non-condensing)

● Ambient Humidity (operating, storage): 35-95%RH

● Insulation Impedance: Above 50 MΩ (between the charging section and the housing, using a DC500 megohmmeter)

● Withstanding Voltage (1min): 1000VAC, 50/60Hz (between charging section and case)

● Temperature Effect: If the temperature range is -30 to +65℃, the sensing distance is within ±15% of the detection distance at +23℃; if the temperature range is -25 to +60℃, the sensing distance is within ±10% of the detection distance at +23℃.

● Voltage Effect: If the voltage range is within ±15% of the rated supply voltage, the sensing distance is within ±10% of the detection distance at the rated supply voltage.

● Protective Structure: IP65 (IEC standard)

● Material: Housing — nickel plated brass/ ABS; Detection surface  (Lens)  — PMMA


E3S-GS Series Photoelectric Sensors
Sensing MethodsSlotSlotSlot


Detection Distance7mm10mm15mm
Standard Sensing ObjectTransparent / OpaqueOpaqueOpaque
Detection Distance adjustmentSensitivity regulatorSensitivity regulatorSensitivity regulator
Response Time1ms1ms1ms
Outline Dimension DrawingFigure1Figure2Figure3

Sensing MethodsGrooved typeGrooved type
Detection Distance30mm50mm
Standard Sensing ObjectOpaqueOpaque
Detection Distance adjustmentSensitivity regulatorSensitivity regulator
Response Time1ms1ms
Outline Dimension DrawingFigure4

Dimensions & wiring diagram

E3S-GS series, dimensions and wiring diagram, Photoelectric Sensor



Upload page data and generate pages.

  Get in touch with us now!

Please take a minute or two to complete this simple form to get reply in 24 hours, thank you!

*Please check the trash box of your mailbox, if you do not receive our email.