

E3S-GS Series
Amplifier Built-in Type Photoelectric Sensor
E3S-GS series amplifier built-in type photoelectric sensor is a slot shape photoelectric sensor with 1ms turn-on delay. The detection method of the E3S-GS series is slot type. E3S-GS series photoelectric sensors use high-quality chips, which have the advantages of long life and high reliability, and can adapt to complex working environments. E3S-GS series photoelectric sensors are equipped with power reverse protection, short-circuit protection, current overload protection, etc., and can be directly connected with PLC device. The operating status of the sensor can be directly observed through the red LED, E3S-GS series photoelectric sensors are IP65 protected (IEC standard). E3S-GS series photoelectric sensors also have a enhanced shell strength and improved wire breakage countermeasures. Depending on the control output, photoelectric sensors can be divided into NPN type (Type N), PNP type (Type P), AC type (Type A), and Relay type (Type J). For more information about the proximity sensors, please visit "What is Photoelectric Sensors".
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How to order
Features
● Components using high-quality chips
● Reverse power supply protection, short circuit protection, and current overload protection
● Long life and high reliability, high environmental adaptability
● Directly connect to PLC
● The red LED shows the operating status of the sensor
● Enhanced shell strength, and improved wire breakage countermeasures
● IP65 protection structure (IEC specification)
● Please read "Precautions for Photoelectric Sensors" before use
Parameters
● Turn-on Delay: 1.5ms
● Light Source: Infrared light 660nm
● Detection Method: Slot type
● Supply Voltage: DC type — 12-24VDC (6-36VDC) with voltage pulsation (p-p) below 10%; AC type — 110-220VAC (90-250VAC), 50/60Hz
● Current Consumption Type N.P — under 20mA; Type A — under 1.7mA
● Control Output: Type N.P – below 300mA; Type A – below 400mA; Type J – below 2A (contact life above 100,000 cycles)
● Circuit Protection: N.P.D type — Reverse power supply protection, surge absorption, short-circuit protection; A Type — Surge absorption
● Ambient Temperature (operating, storage): -30-+65°C (non-freezing, non-condensing)
● Ambient Humidity (operating, storage): 35-95%RH
● Insulation Impedance: Above 50 MΩ (between the charging section and the housing, using a DC500 megohmmeter)
● Withstanding Voltage (1min): 1000VAC, 50/60Hz (between charging section and case)
● Temperature Effect: If the temperature range is -30 to +65℃, the sensing distance is within ±15% of the detection distance at +23℃; if the temperature range is -25 to +60℃, the sensing distance is within ±10% of the detection distance at +23℃.
● Voltage Effect: If the voltage range is within ±15% of the rated supply voltage, the sensing distance is within ±10% of the detection distance at the rated supply voltage.
● Protective Structure: IP65 (IEC standard)
● Material: Housing — nickel plated brass/ ABS; Detection surface (Lens) — PMMA
Datasheet
E3S-GS Series Photoelectric Sensors Dimensions 16x25x55 20x52x72 16x35.5x40.5 Sensing Methods Slot Slot Slot Models DC NPN NO E3S-GS7N1 E3S-GS10N1 E3S-GS15N1 NC E3S-GS7N2 E3S-GS10N2 E3S-GS15N2 NO+NC PNP NO E3S-GS7P1 E3S-GS10P1 E3S-GS15P1 NC E3S-GS7P2 E3S-GS10P2 E3S-GS15P2 NO+NC Detection Distance 7mm 10mm 15mm Standard Sensing Object Transparent / Opaque Opaque Opaque Detection Distance adjustment Sensitivity regulator Sensitivity regulator Sensitivity regulator Response Time 1ms 1ms 1ms Outline Dimension Drawing Figure1 Figure2 Figure3 Dimensions 20x52x72 20x52x72 Sensing Methods Grooved type Grooved type Models DC NPN NO E3S-GS30E4 E3S-GS50E4 NC E3S-GS30E2 E3S-GS50E2 NO+NC E3S-GS30E42 E3S-GS50E42 PNP NO E3S-GS30F4 E3S-GS50F4 NC E3S-GS30F2 E3S-GS50F2 NO+NC E3S-GS30F42 E3S-GS50F42 Detection Distance 30mm 50mm Standard Sensing Object Opaque Opaque Detection Distance adjustment Sensitivity regulator Sensitivity regulator Response Time 1ms 1ms Outline Dimension Drawing Figure4 —
Dimensions & wiring diagram
Updates
2023-10-27
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